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Investigation of electric fields, interface charges, and conduction band offsets at ZnSe/GaAs heterojunctions with a novel photoreflectance technique

Published online by Cambridge University Press:  03 September 2012

D. J. Dougherty ,
S.B. Fleischer ,
E. L. Warlick ,
J. L. House ,
G. S. Petrich ,
E. Ho ,
L. A. Kolodziejski  and
E. P. Ippen
D. J. Dougherty
Affiliation:
Research Laboratory of Electronics, MIT 36-325, 50 Vassar St., Cambridge, MA 02139.
S.B. Fleischer
Affiliation:
Research Laboratory of Electronics, MIT 36-325, 50 Vassar St., Cambridge, MA 02139.
E. L. Warlick
Affiliation:
Research Laboratory of Electronics, MIT 36-325, 50 Vassar St., Cambridge, MA 02139.
J. L. House
Affiliation:
Research Laboratory of Electronics, MIT 36-325, 50 Vassar St., Cambridge, MA 02139.
G. S. Petrich
Affiliation:
Research Laboratory of Electronics, MIT 36-325, 50 Vassar St., Cambridge, MA 02139.
E. Ho
Affiliation:
Research Laboratory of Electronics, MIT 36-325, 50 Vassar St., Cambridge, MA 02139.
L. A. Kolodziejski
Affiliation:
Research Laboratory of Electronics, MIT 36-325, 50 Vassar St., Cambridge, MA 02139.
E. P. Ippen
Affiliation:
Research Laboratory of Electronics, MIT 36-325, 50 Vassar St., Cambridge, MA 02139.
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Abstract

ZnSe/GaAs heterojunctions were investigated by contactless electroreflectance and photoreflectance techniques. Negative surface charge densities on the order of 1012 cm-2 were observed for films grown on n-type GaAs indicating a large contribution to the conduction band barrier between the materials due to band bending. The conduction band offset was also measured using a new photoreflectance technique involving a tunable pump laser.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 448: Symposium M – Control of Semiconductor Surfaces and Interfaces , 1996 , 475
Copyright
Copyright © Materials Research Society 1997

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References

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