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Reliability and Degradation Mechanisms in High Power Broad-Area InGaAs-AlGaAs Strained Quantum Well Lasers

Published online by Cambridge University Press:  28 May 2015

Yongkun Sin ,
Nathan Presser ,
Stephen LaLumondiere ,
Miles Brodie ,
Zachary Lingley ,
Neil Ives ,
Brendan Foran ,
William Lotshaw  and
Steven C. Moss
Yongkun Sin
Affiliation:
Electronics and Photonics Laboratory The Aerospace Corporation El Segundo, CA 90245-4691
Nathan Presser
Affiliation:
Electronics and Photonics Laboratory The Aerospace Corporation El Segundo, CA 90245-4691
Stephen LaLumondiere
Affiliation:
Electronics and Photonics Laboratory The Aerospace Corporation El Segundo, CA 90245-4691
Miles Brodie
Affiliation:
Electronics and Photonics Laboratory The Aerospace Corporation El Segundo, CA 90245-4691
Zachary Lingley
Affiliation:
Electronics and Photonics Laboratory The Aerospace Corporation El Segundo, CA 90245-4691
Neil Ives
Affiliation:
Electronics and Photonics Laboratory The Aerospace Corporation El Segundo, CA 90245-4691
Brendan Foran
Affiliation:
Electronics and Photonics Laboratory The Aerospace Corporation El Segundo, CA 90245-4691
William Lotshaw
Affiliation:
Electronics and Photonics Laboratory The Aerospace Corporation El Segundo, CA 90245-4691
Steven C. Moss
Affiliation:
Electronics and Photonics Laboratory The Aerospace Corporation El Segundo, CA 90245-4691
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Abstract

Reliability and degradation processes in broad-area InGaAs-AlGaAs strained quantum well (QW) lasers are under intensive investigation because these lasers are the key components for fiber lasers and amplifiers that have found both industrial and military applications in recent years. Unlike single-mode lasers that were developed for high reliability telecom applications, broad-area lasers were mainly targeted for applications that require less stringent reliability of the lasers until recently. Especially, the lack of field reliability data is a concern for satellite communication systems where high reliability is required of lasers for long-term duration. For our present study, we addressed this concern by performing long-term life-tests of broad-area InGaAs-AlGaAs strained QW lasers and also by studying mechanisms that are responsible for catastrophic degradation of the lasers.

Keywords

III-Voptoelectroniclaser
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1792: Symposium CC/FF – Defects and Materials Issues in Semiconductors―Relationship to Optoelectronic Properties and Device Reliability , 2015 , mrss15-2130709
Copyright
Copyright © Materials Research Society 2015 

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References

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